Copyright © Philip M. Parker, INSEAD. Terms of Use.
| Year | Description |
| 2001 | Invention patented by Tatyana N. Andryuschenko, Jonathan D. Reid, Steven T. Mayer, and Eric G. Webb on November 26th, 2001. Abstract: Disclosed is a procedure for deposition of a thin and relatively continuous electroless copper film on the substrate of sub-micron integrated circuit features. The electroless copper film is deposited onto a previously deposited PVD copper film, which may be discontinuous. The continuous film formed by electroless deposition allows for sufficient filling of the sub-micron integrated circuit features by electrodeposition. The electroless bath employed to form the continuous electroless copper film may be composed of a reducing agent, a complexing agent, a source of copper ions, a pH adjuster, and optionally one or more surfactants and/or stabilizers. In one example, the reducing agent contains an aldehyde moiety. |
| Source: selected by the editor from original sources. | |
Copyright © Philip M. Parker, INSEAD. Terms of Use.
